100W 400-500MHz Gallium Nitride (GaN) Drone Jammer Module
Product Overview
Our 100W RF jammer module is a high-performance, Class AB Gallium Nitride (GaN) based solution designed specifically for the 400-500MHz frequency band, which is critical for counter-unmanned aerial vehicle (C-UAV) applications. This compact and robust module delivers instantaneous wideband jamming power, making it an ideal core component for building efficient and reliable drone countermeasure systems. Its design prioritizes thermal management and reliability, ensuring stable operation in demanding environments.
Key Features & Advantages
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High-Power GaN Technology: Utilizes advanced GaN-on-Silicon Carbide technology mounted on a copper carrier, enabling high-efficiency, 100W output power in a compact form factor.
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Instantaneous Wideband Coverage: Provides effective jamming across the entire 400-500MHz band simultaneously.
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Compact & Lightweight: Measures only 150 x 80 x 22 mm and weighs approximately 800g, facilitating integration into various portable or fixed systems.
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High Reliability & Ruggedness: Engineered for robust operation with patented thermal management solutions for superior heat dissipation.
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Customization Support: Key parameters like sweep speed and input signal source (VCO, DDS, SDR) can be customized to meet specific system requirements.
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Integrated Signal Source: Comes with a built-in high-speed noise-modulated signal source, ready for deployment.
Technical Specifications
| Parameter | Specification | Notes |
|---|---|---|
| Frequency Range | 400 – 500 MHz | |
| Output Power | 50 ± 1 dBm (Typical 100W) | |
| Operating Voltage | 28 VDC | Operational range: 28-32V |
| Operating Current | ≤ 9.2 A | @ 100W output |
| RF Connector | N-Type Female | Output |
| Input Impedance | 50 Ω | |
| Output Impedance | 50 Ω | |
| Analog Sweep Speed | 270 KHz | Customizable (100-500 KHz) |
| Input Signal Source | Built-in High-Speed Noise Generator | Customizable (VCO, DDS, SDR) |
| Operating Temperature | -20°C to +65°C | |
| Dimensions (L x W x H) | 150 mm x 80 mm x 22 mm | |
| Weight | ~800 g | |
| Indicators | Power Switch, Over-Voltage, Over-Temperature | LED Indicators |
Design & Construction
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Core Technology: Class AB Gallium Nitride (GaN) amplifier design, fabricated on a Silicon Carbide (SiC) substrate for optimal high-power and high-frequency performance.
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Thermal Management: Mounted on a copper carrier with proprietary thermal interface solutions to ensure efficient heat transfer and long-term reliability under continuous high-power operation.
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Robust Housing: Housed in a compact, mechanically sturdy casing suitable for integration into various electronic warfare and counter-UAV systems.
Applications
This module serves as a fundamental building block for systems requiring high-power RF jamming in the lower UHF band, including:
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Drone Countermeasure (C-UAS) Systems: To disrupt the control, navigation, and datalink signals of unauthorized UAVs.
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Electronic Warfare (EW) Platforms: For tactical communication denial in the 400-500MHz spectrum.
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Custom Security & Counter-Surveillance Solutions: Integrated into fixed-site or mobile anti-drone systems.
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RF Testing & Signal Simulation Equipment: As a high-power signal source for specific test scenarios.
Ordering & Customization
This 100W GaN module supports customization to fit your specific project needs. Key customizable features include:
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Analog Sweep Speed
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Type of Input Signal Source (e.g., VCO, DDS, SDR)
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Certain mechanical interfaces
Conclusion
Engineered for power, efficiency, and reliability, our 100W 400-500MHz GaN Jammer Module represents a state-of-the-art solution for modern RF jamming requirements. Its combination of high output power, wide instantaneous bandwidth, and a compact footprint makes it an excellent choice for developers and integrators of advanced counter-drone and electronic protection systems.