Professional 50W GaN RF Amplifier Module for 840-1000MHz Band
This high-performance RF power module delivers 50W of saturated output power across the 840-1000MHz frequency range. Engineered with advanced AB-Class GaN-on-SiC technology, it is designed for systems requiring robust, wideband amplification in demanding environments, such as counter-UAS platforms and wideband communication systems.
Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 840 – 1000 MHz |
| Output Power | 50 W (Typical, +47 ±1 dBm) |
| Amplifier Class | AB (GaN HEMT on SiC) |
| Instantaneous Bandwidth | 160 MHz |
| Impedance | 50 Ω |
| Operating Voltage | 28V DC (24V – 28V Range) |
| Operating Current | ≤ 3.2A – 4.5A |
| Internal Modulation Source | High-Speed Noise Generator |
| External Source Compatibility | VCO, DDS, SDR (via SMA-F) |
| Sweep Rate | 270 KHz (Custom: 100-500 KHz) |
| Operating Temperature | -20°C to +65°C |
| Status Indicators | Power, Over-voltage, Over-temperature |
| Connector | SMA Female |
| Dimensions (L x W x H) | 117 mm x 58 mm x 18 mm |
| Weight | ~300 g |
Core Advantages
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High-Power GaN Core: Utilizes efficient AB-Class GaN-on-SiC technology for high power density, excellent linearity, and superior thermal performance in a compact package.
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Wide Instantaneous Bandwidth: The 160MHz bandwidth supports the transmission of complex waveforms and wideband jamming signals without tuning delays.
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Operational Resilience: Designed for reliable performance across an extended temperature range (-20°C to +65°C), suitable for field-deployed applications.
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Signal Source Flexibility: Functions as a standalone unit with its internal source or integrates seamlessly as a power amplifier stage for external, sophisticated signal generators (VCO/DDS/SDR).
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Robust Thermal Design: The GaN amplifier die is mounted on a copper baseplate for effective heat dissipation, ensuring stability during continuous operation.
Typical Applications
This module serves as an ideal power amplification solution for:
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Broadband jamming and electronic countermeasure (ECM) systems.
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Counter-Unmanned Aerial System (C-UAS) equipment targeting L-band frequencies.
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High-power communication test setups and signal simulation platforms.
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Ruggedized military and aerospace RF systems requiring reliable wideband performance.
Summary
Providing a blend of high power, wide bandwidth, and operational durability, this 840-1000MHz GaN amplifier module is engineered for advanced RF system integrators. Its flexible design supports both simple and complex signal generation architectures, making it a versatile core component for demanding wideband applications in the L-band spectrum.
